Especificações Técnicas

ODUCT CATEGORY: MOSFET   MANUFACTURER: TOSHIBA   TECHNOLOGY: SI   MOUNTING STYLE: SMD/SMT   PACKAGE / CASE: SOP-8   NUMBER OF CHANNELS: 1 CHANNEL   TRANSISTOR POLARITY: N-CHANNEL   VDS - DRAIN-SOURCE BREAKDOWN VOLTAGE: 30 V   ID - CONTINUOUS DRAIN CURRENT: 7 A   RDS ON - DRAIN-SOURCE RESISTANCE: 23 MOHMS   VGS - GATE-SOURCE VOLTAGE: +/- 20 V   MINIMUM OPERATING TEMPERATURE: - 55 C   MAXIMUM OPERATING TEMPERATURE: + 150 C   CHANNEL MODE: ENHANCEMENT   BRAND: TOSHIBA   CONFIGURATION: SINGLE HEX DRAIN   FALL TIME: 8.4 NS   HEIGHT: 1.68 MM   LENGTH: 4.9 MM   PD - POWER DISSIPATION: 2.5 W   RISE TIME: 3.8 NS   SERIES: TPCF8001   TRANSISTOR TYPE: 1 N-CHANNEL   WIDTH: 3.9 MM TPCF8001-10QTD TOSHIBA TRANSISTOR MOSFET F2A CANAL N MAIORES DETALHES DE TPCF8001-10QTD NO SITE DO FABRICANTE: HTTP://PRIBOR-SYSTEMS.RU/FROMOREMAX/PDF/MOSFET/TPCF8001.PDF TAGS DE TPCF8001-10QTD: TPCF8001-UNIT, TPCF8001-10QTD, SMD F2A, SMD F:2A, TPCF8001-10UND, TPCF8001, 2-3U1A, F2A, 41U5492, TE85L,F, TE85L-F, TE85LF, U-MOS III, SOP-8, T5LLNV2FM, TG0A15B 0807, 2928B2F-002

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